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R (on) (typ.) I 60A

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS …

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(UMOSⅥ) Datasheet pdf, Equivalent, Schematic,Datasheets, Transistor, Cross Reference, PDF Download,Free Search Site, Pinout

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R (on) (typ.) I 120A

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EP0183623B1 EP85402316A EP85402316A EP0183623B1 EP 0183623 B1 EP0183623 B1 EP 0183623B1 EP 85402316 A EP85402316 A EP 85402316A EP 85402316 A EP85402316 A EP 85402316A EP 0183623 B1 EP0183623 B1 EP 0183623B1 Authority EP European Patent Office Prior art keywords layer oxide layer silicon layer temperature replacing Prior art date 19841128 Legal status …

Halbleiteranordnung MOStyp FUJI ELECTRIC CO LTD

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A MOS type semiconductor device, comprises a semiconductor layer (1) of a first conductivity type, and a plurality of MOS type rectangular cells, each having four major sides including short and long major sides and including a channel region (3) of a second conductivity type formed in a surface layer of the semiconductor layer (1), and one or more source regions (4) of the first conductivity ...

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TOSHIBA Field Effect Transistor Silicon NChannel MOS Type ...

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2SK4002 1 20061108 TOSHIBA Field Effect Transistor Silicon NChannel MOS Type (π−MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive

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